BFG325W/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005
Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
1.2 Features
s
s
s
s
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability
1.3 Applications
s
Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
x
analog and digital cellular telephones
x
cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
x
radar detectors
x
pagers
x
Satellite Antenna TeleVision (SATV) tuners
1.4 Quick reference data
Table 1:
V
CBO
V
CEO
I
C
P
tot
h
FE
C
CBS
f
T
G
max
Quick reference data
Conditions
open emitter
open base
T
sp
≤
90
°C
I
C
= 15 mA; V
CE
= 3 V;
T
j
= 25
°C
V
CB
= 5 V; f = 1 MHz;
emitter grounded
I
C
= 15 mA; V
CE
= 3 V;
f = 1 GHz; T
amb
= 25
°C
I
C
= 15 mA; V
CE
= 3 V;
f = 1.8 GHz; T
amb
= 25
°C
[1]
Symbol Parameter
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
collector-base
capacitance
transition frequency
maximum power gain
[2]
Min
-
-
-
-
60
-
-
-
Typ
-
-
-
-
100
0.27
14
18.3
Max
15
6
35
210
200
0.4
-
-
Unit
V
V
mA
mW
pF
GHz
dB
Philips Semiconductors
BFG325W/XR
NPN 14 GHz wideband transistor
Quick reference data
…continued
Conditions
I
C
= 15 mA; V
CE
= 3 V;
f = 1.8 GHz; T
amb
= 25
°C;
Z
S
= Z
L
= 50
Ω
Γ
s
=
Γ
opt
; I
C
= 3 mA;
V
CE
= 3 V; f = 2 GHz
Min
-
Typ
14
Max
-
Unit
dB
insertion power gain
Table 1:
|s
21
|
2
Symbol Parameter
NF
noise figure
-
1.1
-
dB
[1]
[2]
T
sp
is the temperature at the soldering point of the collector pin.
G
max
is the maximum power gain, if K > 1. If K < 1 then G
max
= MSG, see
Figure 4.
2. Pinning information
Table 2:
Pin
1
2
3
4
Pinning
Description
collector
emitter
base
emitter
2, 4
2
1
sym086
Simplified outline
3
4
Symbol
1
3
3. Ordering information
Table 3:
Ordering information
Package
Name
BFG325W/XR
-
Description
plastic surface mounted package; reverse pinning;
4 leads
Version
SOT343R
Type number
4. Marking
Table 4:
Marking codes
Marking code
[1]
A8*
Type number
BFG325W/XR
[1]
* = p: made in Hong Kong.
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
9397 750 14246
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
Conditions
open emitter
open base
open collector
Min
-
-
-
Max
15
6
2
Unit
V
V
V
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
2 of 12
Philips Semiconductors
BFG325W/XR
NPN 14 GHz wideband transistor
Table 5:
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector current (DC)
total power dissipation
storage temperature
junction temperature
Conditions
T
sp
≤
90
°C
[1]
Min
-
-
−65
-
Max
35
210
+175
175
Unit
mA
mW
°C
°C
T
sp
is the temperature at the soldering point of the collector pin.
6. Thermal characteristics
Table 6:
R
th(j-sp)
[1]
Thermal characteristics
Conditions
T
sp
≤
90
°C
[1]
Symbol Parameter
thermal resistance from junction to solder point
Typ
403
Unit
K/W
T
sp
is the temperature at the soldering point of the collector pin.
7. Characteristics
Table 7:
Characteristics
T
j
= 25
°
C; unless otherwise specified.
Symbol Parameter
I
CBO
h
FE
C
CBS
C
CES
C
EBS
f
T
G
max
|s
21
|
2
collector-base cut-off current
DC current gain
collector-base capacitance
collector-emitter capacitance
emitter-base capacitance
transition frequency
maximum power gain
[1]
insertion power gain
Conditions
I
E
= 0 A; V
CB
= 5 V
I
C
= 15 mA; V
CE
= 3 V
V
CB
= 5 V; f = 1 MHz; emitter grounded
V
CE
= 5 V; f = 1 MHz; base grounded
V
EB
= 0.5 V; f = 1 MHz; collector grounded
I
C
= 15 mA; V
CE
= 3 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 15 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
°C
I
C
= 15 mA; V
CE
= 3 V; T
amb
= 25
°C;
Z
S
= Z
L
= 50
Ω
f = 1.8 GHz
f = 3 GHz
NF
P
L(1dB)
IP3
noise figure
output power at 1 dB gain
compression
third order intercept point
Γ
s
=
Γ
opt
; I
C
= 3 mA; V
CE
= 3 V; f = 2 GHz
I
C
= 15 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
°C;
Z
S
= Z
L
= 50
Ω
I
C
= 15 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
°C;
Z
S
= Z
L
= 50
Ω
-
-
-
-
-
14
10
1.1
8.7
19.4
-
-
-
-
-
dB
dB
dB
dBm
dBm
Min
-
60
-
-
-
-
-
Typ
-
100
0.27
0.22
0.49
14
18.3
Max
15
200
0.4
-
-
-
-
pF
pF
pF
GHz
dB
Unit
nA
[1]
G
max
is the maximum power gain, if K > 1. If K < 1 then G
max
= MSG, see
Figure 4.
1
+
Ds
–
s
11
–
s
22
K is the Rollet stability factor:
K
=
----------------------------------------------------------
where
Ds
=
s
11
×
s
22
–
s
12
×
s
21
.
-
2
×
s
21
×
s
12
MSG = maximum stable gain.
2
2
2
9397 750 14246
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
3 of 12
Philips Semiconductors
BFG325W/XR
NPN 14 GHz wideband transistor
250
P
tot
(mW)
200
001aac158
I
C
(mA)
30
25
35
I
B
= 350
µA
300
µA
250
µA
001aac159
150
20
15
10
200
µA
150
µA
100
µA
50
µA
100
50
5
0
0
50
100
150
T
sp
(°C)
200
0
0
1
2
3
4
5
V
CE
(V)
6
Fig 1. Power derating curve
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
001aac160
0.34
C
CBS
(pF)
0.30
40
G
(dB)
MSG
30
s
21 2
001aac161
20
G
max
0.26
10
0.22
0
1
2
3
4
V
CB
(V)
5
0
10
10
2
10
3
f (MHz)
10
4
I
C
= 0 mA; f = 1 MHz.
I
C
= 15 mA; V
CE
= 3 V.
Fig 3. Collector-base capacitance as a function of
collector-base voltage; typical values
Fig 4. Gain as a function of frequency; typical values
9397 750 14246
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
4 of 12
Philips Semiconductors
BFG325W/XR
NPN 14 GHz wideband transistor
90°
+1
135°
+0.5
+2
45°
1.0
0.8
0.6
+0.2
0.4
0.2
180°
0
0.2
0.5
1
2
5
10
0°
0
3 GHz
+5
40 MHz
−0.2
−5
−135°
−0.5
−1
−90°
−2
−45°
1.0
001aac162
V
CE
= 3 V; I
C
= 15 mA; Z
o
= 50
Ω.
Fig 5. Common emitter input reflection coefficient (s
11
); typical values
90°
135°
45°
40 MHz
180°
50
40
30
20
10
0 3 GHz
0°
−135°
−45°
−90°
001aac163
V
CE
= 3 V; I
C
= 15 mA.
Fig 6. Common emitter forward transmission coefficient (s
21
); typical values
9397 750 14246
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
5 of 12
